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1971 - A 256-bit random access memory, GER 1101, is one of the first products manufactured by the Refractory Metal Oxide Semiconductur (RMOS) process. RMOS is a new integrated circuit process developed by the General Electric Company
Picture No
13276456
Media ID
47056728
Size
5561px x 4429px
(1.4MB)
Credit
(c) Keystone Pictures USA/ZUMAPRESS.com/Mary Evans
Usage Restrictions
Editorial Use Only - No Property or Model Releases. For any non-editorial use, please contact Mary Evans direct
Source
Keystone Pictures USA
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Restrictions Only for United Kingdom
1101 Access Circuit Developed Integrated Manufactured Memory Oxide Random Refractory
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